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Equipment
Name:
Oxford Plasmalab 100 RIE/ICP
Equipment Type:
Description:
- Load lock chamber.
- 205mm Cryo RIE electrode (-150 - 400°C), with backside helium cooling.
- ICP 180mm high-density plasma source with 3kW RF generator and automatic matching unit .
- Substrate bias provided by independent 300W RF generator close-coupled to the lower electrode.
- Endpoint detection system.
- Fluorinated chemistry: Ar, O2, CHF3, CF4,C4F8, SF6
Cryo mode operation is available on request.
For cryo mode requests, please contact Larry Grissom.
Location
| Oxford Plasmalab 100 RIE/ICP | Oxford Plasmalab 80 RIE | Trion RIE/ICP Dry Etcher | |||||
| Technics PEIIB Planar Etcher | Tepla 100 | ||||||